2-DIMENSIONAL HYBRID MODEL OF INDUCTIVELY-COUPLED PLASMA SOURCES FOR ETCHING

Inductively coupled plasmas (ICPs) are currently being investigated as high density ( > 10(11)-10(12) cm-3), low pressure ( < 1-20 mTorr) so urces for semiconductor etching and deposition. We have developed a tw o-dimensional (rz) hybrid model for ICP sources and have used the mode l to investigate Ar/CF4/O2 mixtures for etching applications. The simu lation consists of electromagnetic, electron Monte Carlo, and hydrodyn amic modules with an ''off-line'' plasma chemistry Monte Carlo simulat ion. The model produces the temporally and spatially dependent magneti c and electric fields (both inductively and capacitively coupled), pla sma densities, and the energy resolved flux of ions and radicals to th e substrate. We discuss results for densities, power deposition, and i on energies to the substrate as a function of position.