ELECTRONIC PASSIVATION OF N-TYPE AND P-TYPE GAAS USING CHEMICAL-VAPOR-DEPOSITED GAS

We report on the electronic passivation of n- and p-type GaAs using ch emical vapor deposited cubic GaS. Au/GaS/GaAs fabricated metal-insulat or-semiconductor (MIS) structures exhibit classical high-frequency cap acitor versus voltage (C-V) behavior with well-defined accumulation an d inversion regions. Using high- and low-frequency C-V, the interface trap densities of approximately 10(11) eV-1 cm-2 on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface d id not show any deterioration after a six week time period.