STRAINED-LAYER INSB GASB QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

Citation
Lq. Qian et Bw. Wessels, STRAINED-LAYER INSB GASB QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Applied physics letters, 63(5), 1993, pp. 628-630
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
5
Year of publication
1993
Pages
628 - 630
Database
ISI
SICI code
0003-6951(1993)63:5<628:SIGQGB>2.0.ZU;2-T
Abstract
InSb/GaSb quantum well structures have been prepared by atmospheric pr essure metalorganic vapor phase epitaxy. Strong sharp photoluminescenc e emission peaks with a full width at half-maximum of 6-11 meV were ob tained for the quantum well structures with well thicknesses of 0.35-0 .88 nm, suggesting nearly atomically planar interfaces. The observed p hotoluminescence transition energies are in excellent agreement with t he calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thic knesses above 1 nm, indicating nonplanar growth.