STRAINED-LAYER INSB GASB QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

InSb/GaSb quantum well structures have been prepared by atmospheric pr essure metalorganic vapor phase epitaxy. Strong sharp photoluminescenc e emission peaks with a full width at half-maximum of 6-11 meV were ob tained for the quantum well structures with well thicknesses of 0.35-0 .88 nm, suggesting nearly atomically planar interfaces. The observed p hotoluminescence transition energies are in excellent agreement with t he calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thic knesses above 1 nm, indicating nonplanar growth.