MINORITY-CARRIER MOBILITY ENHANCEMENT IN P-MATCHED TO INP( INGAAS LATTICE)

Minority electron mobilities in p+-In0.53Ga0.47As have been measured w ith the zero field time-of-flight technique. The room-temperature (297 K) minority electron mobilities for p+-In0.53Ga0.47As doped 0.9 and 3 .1 x 10(19) cm-3 are found to be 2900 and 3300 cm2 V-1 s-1, respective ly. These are the first measurements to demonstrate enhancement in min ority-carrier mobility as doping is increased for heavily doped In0.53 Ga0.47As. This enhancement in mobility as doping is increased is simil ar to that observed in p+-GaAs, which has been attributed to reduction s in plasmon and carrier-carrier scattering between minority electrons and majority holes.