COMPOSITION DEPENDENCE OF THE INPLANE EFFECTIVE-MASS IN LATTICE-MISMATCHED, STRAINED GA1-XINXAS INP SINGLE QUANTUM-WELLS/

Authors
MEYER BK DRECHSLER M WETZEL C HARLE V SCHOLZ F LINKE H OMLING P SOBKOWICZ P
Citation
Bk. Meyer et al., COMPOSITION DEPENDENCE OF THE INPLANE EFFECTIVE-MASS IN LATTICE-MISMATCHED, STRAINED GA1-XINXAS INP SINGLE QUANTUM-WELLS/, Applied physics letters, 63(5), 1993, pp. 657-659
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
5
Year of publication
1993
Pages
657 - 659
Database
ISI
SICI code
0003-6951(1993)63:5<657:CDOTIE>2.0.ZU;2-O
Abstract
The composition dependence of the in-plane conduction band effective m ass in strained 15-nm-thick lattice-mismatched Ga1-xInxAs/InP single q uantum wells was determined by conventional cyclotron and optically de tected cyclotron resonance techniques. Our results are in agreement wi th a self-consistent calculation taking into account effects due to no nparabolicity, confinement, strain, and finite two-dimensional carrier densities.