NITROGEN DOPING IN ALGAP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING AMMONIA

Doping characteristics of nitrogen in AlGaP grown by metalorganic vapo r phase epitaxy have been investigated using ammonia as the nitrogen s ource. It was found that nitrogen could be successfully incorporated i nto AlGaP up to as much as 1 x 10(20)/cm3 assisted by the gas phase pa rasitic reaction between trimethylaluminum and ammonia, while nitrogen incorporation into GaP was difficult. Nitrogen incorporation was foun d to be dependent on several factors such as ammonia concentration, Al composition, V/III ratio, and growth temperature. Exciton recombinati on bound to isoelectronic nitrogen in AlGaP was observed for the first time by photoluminescence measurement.