The femtosecond dynamics of hot carriers interacting with a cold high
density electron-hole plasma are investigated in GaAs and Al0.2Ga0.8As
. Studies are performed using a three pulse pump-probe technique where
a cold plasma is first generated by a femtosecond pulse, then pump-pr
obe transmission measurements are performed after a few hundred picose
conds delay. The results indicate only a small increase of the hot car
rier thermalization rate even for plasma densities as high as 10(18) c
m-3.