ELECTRICAL AND PIEZORESISTIVE PROPERTIES OF BORON-IMPLANTED ZMR-SOI FILMS

Authors
JEANJEAN P SICART J ROBERT JL DUTARTRE D CONEDERA V
Citation
P. Jeanjean et al., ELECTRICAL AND PIEZORESISTIVE PROPERTIES OF BORON-IMPLANTED ZMR-SOI FILMS, Sensors and actuators. A, Physical, 36(3), 1993, pp. 241-245
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
36
Issue
3
Year of publication
1993
Pages
241 - 245
Database
ISI
SICI code
0924-4247(1993)36:3<241:EAPPOB>2.0.ZU;2-7
Abstract
We have investigated the electrical properties of polycrystalline depo sited zone-melt-recrystallized (ZMR) and boron-implanted silicon films between 4 and 400 K and their piezoresistivity at room temperature. T he films exhibit both high mobility ( 1 50 cm2/V s) and gauge factor ( 95) in comparison with thermally annealed films. We conclude that ZMR silicon would provide substrates with improved electrical and mechanic al sensing properties for monolithic sensors in thin-film silicon-on-i nsulator (SOI) technology.