SIMULATION AND ANALYSIS OF SILICON ELECTROOPTIC MODULATORS UTILIZING THE CARRIER-DISPERSION EFFECT AND IMPACT-IONIZATION MECHANISM

Authors
Citation
Hc. Huang et Tc. Lo, SIMULATION AND ANALYSIS OF SILICON ELECTROOPTIC MODULATORS UTILIZING THE CARRIER-DISPERSION EFFECT AND IMPACT-IONIZATION MECHANISM, Journal of applied physics, 74(3), 1993, pp. 1521-1528
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
74
Issue
3
Year of publication
1993
Pages
1521 - 1528
Database
ISI
SICI code
0021-8979(1993)74:3<1521:SAAOSE>2.0.ZU;2-P
Abstract
A new type of Si guided-wave electro-optic modulator is proposed and a nalyzed. The modulator makes use of the impact-ionization mechanism fo r carrier generation, and the carrier-dispersion effect for electro-op tic conversion. Both electrical and wave propagation properties of the modulator were examined by a two-dimensional device simulator and a t hree-dimensional waveguide simulator, respectively. Numerical estimate s of phase modulation due to refractive-index change and intensity mod ulation due to optical absorption and radiation loss were obtained. On e of important features of the prospected modulator is speed. The simu lated turn-on and turn-off time of the modulator was less than 1 ns. G Hz modulation is, therefore, possible for this class of modulators wit h device structure and doping profiles optimized for fiber coupling.