WATER-VAPOR CONTROLLING SELECTIVE REACTIVE ION ETCHING OF SIO2 SI IN NF3 PLASMA/

Water vapor added to NF3 plasma during reactive ion etching controls t he ratio of the etch rates of SiO2 and Si. Selectivity rises from a va lue of 0.14 at water-free 100% NF3 to 1.99 for an initial gas composit ion of 35% H2O-65% NF3. The results of mass and energy analysis of the plasma yield a basis for discussing the mechanisms which effect the s electivity. The NF3/H2O plasma removes native oxides from Si surfaces.