RADIATION-DAMAGE BEHAVIOR OF LINBO3 CRYSTAL BY MEV-F ION-IMPLANTATION

Citation
Br. Shi et al., RADIATION-DAMAGE BEHAVIOR OF LINBO3 CRYSTAL BY MEV-F ION-IMPLANTATION, Journal of applied physics, 74(3), 1993, pp. 1625-1628
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
74
Issue
3
Year of publication
1993
Pages
1625 - 1628
Database
ISI
SICI code
0021-8979(1993)74:3<1625:RBOLCB>2.0.ZU;2-1
Abstract
X, Y, and Z crystalline cut LiNbO3 crystals were implanted by 1.0 MeV F ions with a dose of 1 x 10(15) ions/cm2. The virgin and implanted Li NbO3 crystals were investigated using the Rutherford backscattering/ch anneling technique. The obtained minimum yields of virgin crystals wer e 4%, 8%, and 6% for X-, Y-, and Z-cut LiNbO3 crystals, respectively, because of their different arrangements of lattice sites in channeling direction. The measured damage profiles are also influenced by the ar rangement of lattice sites in channeling measurements. The damage prof iles of X-cut LiNbO3 crystal induced by 1.0 MeV F+ at a fluence range of 1 x 10(14)-3 x 10(15) ions/cm2 have been studied and compared with the Transport of Ions in Matter, version 1990 calculation. It has been found that not only the nuclear energy deposition but also the electr onic energy deposition influences the defect production.