TIME-DEPENDENCE OF RADIATION-INDUCED GENERATION CURRENTS IN IRRADIATED INGAAS PHOTODIODES

The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduct ion of the E2 peak height with time, as measured by deep level transie nt spectroscopy. The reverse current is found to decay with a logarith mic time dependence, which can be explained by a model in which the an nealing of the E2 defects is controlled by a distribution of thermal e nergy barriers.