ATOMIC IMAGING OF AN INSE SINGLE-CRYSTAL SURFACE WITH ATOMIC-FORCE MICROSCOPE

The atomic force microscope was employed to observed in air the surfac e atomic structure of InSe, one of III-VI compound semiconductors with layered structures. Atomic arrangements were observed in both n-type and p-type materials. The observed structures are in good agreement wi th those expected from bulk crystal structures. The atomic images beca me less clear by repeating the imaging process. Wide area imaging afte r the imaging of small area clearly showed that a mound was created at the spot previously imaged.