MAGNETOTRANSPORT AND MAGNETOOPTICAL PROPERTIES OF DELTA-DOPED INSB

Results of Shubnikov-de Haas (SdH), cyclotron resonance (CR), and Hall -effect measurements on delta-doped InSb:Si films grown by molecular-b eam epitaxy on insulating InP substrates are reported. The investigati on covers samples with sheet densities of Si dopant atoms ranging from 1 x 10(11) to 1 x 10(13) cm-2, temperatures from 4.2 to 300 K, and fi elds from 0 to 7 T. The SdH oscillations show that the samples contain electrons of two-dimensional nature, occupying multiple subbands. The effective masses obtained from the CR data correspond well to the sub band occupation densities. The Hall measurements as well as the CR exp eriments also give evidence for the presence of additional electrons, with the conduction-band-edge mass m = 0.014m0 of bulk InSb, which ex ist presumably in the bulk of the films.