CHARGE TRAPPING ON DIFFERENT CUTS OF A SINGLE-CRYSTALLINE ALPHA-SIO2

Authors
GONG H LEGRESSUS C OH KH DING XZ ONG CK TAN BTG
Citation
H. Gong et al., CHARGE TRAPPING ON DIFFERENT CUTS OF A SINGLE-CRYSTALLINE ALPHA-SIO2, Journal of applied physics, 74(3), 1993, pp. 1944-1948
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
3
Year of publication
1993
Pages
1944 - 1948
Database
ISI
SICI code
0021-8979(1993)74:3<1944:CTODCO>2.0.ZU;2-D
Abstract
A scanning electron microscope is employed for the investigation of ch arging on different cuts of an alpha-SiO2. A method for the determinat ion of trapped charges is proposed. Charging on different cuts is obse rved to decrease in the order of z cut, 30-degrees cut, 45-degrees cut , and 60-degrees cut of the alpha-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of th e experiments and the method of charge determination are given.