L-H INTERFACE IMPROVEMENT FOR ULTRA-HIGH-EFFICIENCY SI SOLAR-CELLS

Several phenomena normally considered separately are taken into accoun t simultaneously to model a new solar-cell structure. A planar substru cture inserted in the cell emitter is provided at its faces with two L -H interfaces which modify recombination mechanisms inside the accumul ation layers. The theoretical modelization and one-dimensional numeric al simulation show its yield to be 35%-40%. In practice, fabrication w ould necessitate uniting recent technological advances in the same fin e substructure to ensure: (i) absorption of low-energy photons; (ii) o ptical confinement of the infrared light; and (iii) formation of the L -H interfaces at its edges.