AN ENVELOPE FUNCTION DESCRIPTION OF THE QUANTUM-WELL FORMED IN STRAINED-LAYER SIGE SI MODULATION-DOPED FIELD-EFFECT TRANSISTORS/

Schrodinger and Poisson equations are solved self-consistently to calc ulate the quantum mechanical properties of the quantum well (QW) forme d in SiGe/Si/SiGe strained layer modulation doped field effect transis tors. The strain produces an electron quantum well in Si. The two-dime nsional electron gas distribution is calculated to show excellent conf inement at low temperature. The confinement is poor at very low electr on concentration at room temperature. However, it improves with increa sing number of channel electrons. Moreover, a large electron concentra tion in a wide QW may result in the loss of confinement.