M. Nishitani et al., HOMOJUNCTION DIODE OF CUINSE2 THIN-FILM FABRICATED BY NITROGEN IMPLANTATION, Journal of applied physics, 74(3), 1993, pp. 2067-2070
Rectifying homojunction have been fabricated in polycrystalline CuInSe
2 thin film. The p-n junction diode was obtained by short annealing in
nitrogen atmosphere at 450-degrees-C following the ion implantation o
f nitrogen with the energy and the dose of 50 keV and 1 x 10(15) cm-2,
respectively. The properties of the near surface region in the films
implanted have been studied by the Raman scattering spectroscopy. The
secondary ion mass spectroscopy depth profile of the nitrogens in the
CuInSe2 film and the capacitive-voltage characteristics of the rectify
ing diode have been measured to characterize the junction properties.
The photovoltaic characteristics in AM 1.0, 100 mW/cm2 are shown with
the efficiency of 0.35%.