OPTICAL STUDY OF AN N-TYPE MODULATION-DOPED GAAS ALAS MULTIPLE-QUANTUM-WELL STRUCTURE/

Authors
SCHMIEDEL T FU LP LEE ST YU WY PETROU A DUTTA M PAMULAPATI J NEWMAN PG BOVIATSIS J
Citation
T. Schmiedel et al., OPTICAL STUDY OF AN N-TYPE MODULATION-DOPED GAAS ALAS MULTIPLE-QUANTUM-WELL STRUCTURE/, Journal of applied physics, 74(3), 1993, pp. 2100-2102
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
3
Year of publication
1993
Pages
2100 - 2102
Database
ISI
SICI code
0021-8979(1993)74:3<2100:OSOANM>2.0.ZU;2-T
Abstract
We present an optical study (photoluminescence and Raman scattering) o f a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barri ers release their electrons in the GaAs wells, creating a dense quasi- two-dimensional electron gas. The Raman spectra contain a feature asso ciated with the e1 --> e2 intersubband transition.