ULTRAFAST RELAXATION OF HOT MINORITY-CARRIERS IN P-GAAS

The dynamics of hot minority carriers in p-GaAs is calculated for dopi ng concentrations in the range of 1.5 X 10(17) cm-3 to 1. 5 X 10(18) c m-3. It is shown that the electron-hole interaction increases the rate of dissipation of the excess energy of the minority carriers in the e arly stages of the process. However, this channel for energy dissipati on becomes weaker as the cooling of the minority carriers proceeds, an effect more noticeable in the case of high doping levels. When the el ectron-hole interaction is disregarded, the dissipation rate is always smaller for low doping concentrations.