PLANARIZED GROWTH OF ALGAAS GAAS HETEROSTRUCTURES ON PATTERNED SUBSTRATES BY MOLECULAR-BEAM EPITAXY/

The profiles of AlGaAs/GaAs heterostructures grown by gas-source molec ular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formati on of high index planes. With a proper combination of low growth tempe rature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GS MBE growth profile at lower substrate temperature with reasonable accu racy.