NOVEL DIFFUSION PHENOMENON OF DOPANTS IN SILICON AT LOW-TEMPERATURES - COMMENT

Authors
RONSHEIM PA TEJWANI M
Citation
Pa. Ronsheim et M. Tejwani, NOVEL DIFFUSION PHENOMENON OF DOPANTS IN SILICON AT LOW-TEMPERATURES - COMMENT, Physical review letters, 71(6), 1993, pp. 947-947
Citations number
4
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
6
Year of publication
1993
Pages
947 - 947
Database
ISI
SICI code
0031-9007(1993)71:6<947:NDPODI>2.0.ZU;2-U