NOVEL DIFFUSION PHENOMENON OF DOPANTS IN SILICON AT LOW-TEMPERATURES - REPLY

Authors
WITTMER M FAHEY P SCILLA GJ IYER SS
Citation
M. Wittmer et al., NOVEL DIFFUSION PHENOMENON OF DOPANTS IN SILICON AT LOW-TEMPERATURES - REPLY, Physical review letters, 71(6), 1993, pp. 948-948
Citations number
3
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
6
Year of publication
1993
Pages
948 - 948
Database
ISI
SICI code
0031-9007(1993)71:6<948:NDPODI>2.0.ZU;2-T