MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY

Authors
ZEKENTES K HALKIAS G DIMOULAS A TABATA A BENYATTOU T GUILLOT G MORANTE JR PEIRO F CORNET A GEORGAKILAS A CHRISTOU A
Citation
K. Zekentes et al., MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 21-25
Citations number
17
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
21 - 25
Database
ISI
SICI code
0921-5107(1993)20:1-2<21:MPFTDO>2.0.ZU;2-8
Abstract
The materials problems in the InGa1-xAs/In0.52Al0.48As on InP(001) sys tem, which potentially affect the performance, reproducibility and sta bility of high electron mobility transistor (HEMT) devices, have been investigated. It is shown that crystalline imperfections and InAlAs gr owth roughness strongly affect the InGaAs/InAlAs heterostructures. A c orrelation between the structural and optical properties of InAlAs was shown. The strained InxGa1-xAs channel is shown to enhance HEMT trans port properties for x = 0.60 and channel thickness less than 25 nm.