BE-IMPLANTATION IN GA(AL)SB LAYERS - RADIATION-DAMAGE( ION)

Authors
PEROTIN M PEREZ A LUQUET H GOUSKOV L SABIR A COUDRAY P
Citation
M. Perotin et al., BE-IMPLANTATION IN GA(AL)SB LAYERS - RADIATION-DAMAGE( ION), Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 53-57
Citations number
15
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
53 - 57
Database
ISI
SICI code
0921-5107(1993)20:1-2<53:BIGL-R>2.0.ZU;2-K
Abstract
Be+ ion implantation into Te-doped Ga(Al)Sb (x(Al) almost-equal-to 4%) epilayers was performed to realize the p+ layer of a p+/n-GaAlSb/GaSb n+ IR avalanche photodetector. A double implantation using 100 + 50 k eV energies and fluences around 10(13) CM-2 is found to be a convenien t procedure to produce a junction depth of 0.5 mum. Damage levels crea ted by Be+ ions in GaAlSb layers are simulated and investigated throug h channelling measurements and it is seen that heat treatments (15 min , 450-degrees-C, H-2) improve the activation. This paper clearly shows that Be' ion implantation leads to a low damage level in this III-V c ompound.