NONDESTRUCTIVE APPROACHES TO INTERDIFFUSION PHENOMENA ACROSS GAINAS GAINASP INTERFACES - PHOTOLUMINESCENCE VS RAMAN/

Authors
PEYRE H ALSINA F JUILLAGUET S MASSONE E CAMASSEL J PASCUAL J GLEW RW
Citation
H. Peyre et al., NONDESTRUCTIVE APPROACHES TO INTERDIFFUSION PHENOMENA ACROSS GAINAS GAINASP INTERFACES - PHOTOLUMINESCENCE VS RAMAN/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 73-76
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
73 - 76
Database
ISI
SICI code
0921-5107(1993)20:1-2<73:NATIPA>2.0.ZU;2-A
Abstract
We report a cross investigation, performed on the same series of sampl es, of the effect of interdiffusion on the photoluminescence and Raman spectra of a prototype structure made of a single GaInAs/GaInAsP quan tum well (QW). Provided careful analyses are done, we find that both m ethods of investigation can be used with reasonable agreement.