ATOMIC-SCALE SIMULATION OF LATTICE-MISMATCHED HETEROSTRUCTURES - CASEOF CDTE GAAS/

Authors
ROUHANI MD SAHLAOUI M GUE AM ESTEVE D
Citation
Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF LATTICE-MISMATCHED HETEROSTRUCTURES - CASEOF CDTE GAAS/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 88-90
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
88 - 90
Database
ISI
SICI code
0921-5107(1993)20:1-2<88:ASOLH->2.0.ZU;2-Z
Abstract
Atomic-scale simulation of heteroepitaxial growth has been performed u sing the valence force field approximation and the Monte Carlo techniq ue. The creation of point defects, followed by their alignment to form misfit dislocations are observed. Results have been extrapolated to e valuate the critical thicknesses.