TRANSPORT PROCESSES IN AU N-INP AND AU/OXIDE/N-INP DEVICES TREATED INOXYGEN MULTIPOLAR PLASMA/

In this paper, we show that the transport processes in metal-semicondu ctor Au/InP and in metal-oxide-semiconductor devices Au/oxide/InP can be interpreted in terms of thermionic emission tunnelling through the oxide interfacial layer. We can deduce from this interpretation an app roximate value of the thickness delta of the oxide layer and compare i t with ellipsometric measurements, which give results in the range 70- 300 angstrom; good agreement is observed between these values. Ellipso metric measurements also give a refractive index of around 2. The Rich ardson constant A deduced from Richardson's plots ranges from 8.5 to 12 A cm-2 K-2 which can be compared with the calculated value of 9.6 A cm-2 K-2.