OPTICAL CHARACTERIZATION OF SI WAFERS FOR ULTRALARGE-SCALE INTEGRATION

Authors
OGAWA T LU TJ TOYODA K NANGO N ABE T KUSAMA T
Citation
T. Ogawa et al., OPTICAL CHARACTERIZATION OF SI WAFERS FOR ULTRALARGE-SCALE INTEGRATION, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 172-174
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
172 - 174
Database
ISI
SICI code
0921-5107(1993)20:1-2<172:OCOSWF>2.0.ZU;2-M
Abstract
IR light scattering tomography is very effective for quantitative meas urements of oxygen precipitates and denuded zones in Si wafers. We con firmed that reflection and scattering of visible light or an optical b eam with a shorter wavelength than the bandgap of Si crystals is very useful for non-contacting, non-destructive detection of defects locate d just below the surface of an Si wafer. This principle is applicable to the characterization of compound semiconductors.