DETERMINATION OF REFRACTIVE-INDEXES OF IN0.52AL0.48AS ON INP IN THE WAVELENGTH RANGE FROM 250 TO 1900 NM BY SPECTROSCOPIC ELLIPSOMETRY

Authors
DINGES HW BURKHARD H LOSCH R NICKEL H SCHLAPP W
Citation
Hw. Dinges et al., DETERMINATION OF REFRACTIVE-INDEXES OF IN0.52AL0.48AS ON INP IN THE WAVELENGTH RANGE FROM 250 TO 1900 NM BY SPECTROSCOPIC ELLIPSOMETRY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 180-182
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
180 - 182
Database
ISI
SICI code
0921-5107(1993)20:1-2<180:DOROIO>2.0.ZU;2-T
Abstract
In a previous paper, we found that between InP and In0.52Al0.48As grow n by molecular beam epitaxy, an interface layer exists, owing to the i nteraction of arsenic with InP in the preheat phase of the MBE growth. To determine the refractive index and thicknesses of the In0.52Al0.48 As and the interface layer in the wavelength range from 300 to 1900 nm , layers 10, 20, 200 and 2000 nm thick of MBE-grown In0.52Al0.48As on InP were investigated using spectroscopic ellipsometry.