WHOLE WAFER ASSESSMENT OF ELECTRONIC MATERIALS BY SCANNING PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAGE

Authors
BUGAJSKI M EDELMAN P ORNOCH J WESOLOWSKI M LEWANDOWSKI W KUCHARSKI K
Citation
M. Bugajski et al., WHOLE WAFER ASSESSMENT OF ELECTRONIC MATERIALS BY SCANNING PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAGE, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 186-189
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
186 - 189
Database
ISI
SICI code
0921-5107(1993)20:1-2<186:WWAOEM>2.0.ZU;2-7
Abstract
In this paper, we describe apparatus for measuring photoluminescence ( PL) over the entire wafer and discuss specific examples related to the evaluation of compound semiconductor materials. The origin of PL cont rast in different cases is discussed and some physics underlying the P L process is given. We also show how a combined use of a non-contact, surface photovoltage (SPV) technique and scanning PL (SPL) can contrib ute to our understanding of a variety of processing effects in silicon .