THE EFFECTS OF PROBE POWER ON THE SPATIAL VARIATION OF THE ROOM-TEMPERATURE PHOTOLUMINESCENCE WAVELENGTH OF AN INGAASP EPITAXIAL STRUCTURE

Photoluminescence mapping is widely employed as a non-destructive char acterization technique for epitaxial device structures, yielding measu rements that may be correlated with final device performance. In order to obtain useful correlations, however, a number of experimental fact ors must be considered. We discuss herein the effect of probe laser po wer on the results of mapping experiments and demonstrate how increase d probe power can result in underestimation of both the average proper ties of an epitaxial layer and its inhomogeneity.