APPLICATION OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR MONITORING POINT-DEFECTS IN III-V SEMICONDUCTORS

Authors
KAMINSKI P
Citation
P. Kaminski, APPLICATION OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR MONITORING POINT-DEFECTS IN III-V SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 221-224
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
20
Issue
1-2
Year of publication
1993
Pages
221 - 224
Database
ISI
SICI code
0921-5107(1993)20:1-2<221:AODTSF>2.0.ZU;2-R
Abstract
Deep-level transient spectroscopy has been employed for monitoring gro wn-in point defects in vapour phase epitaxial GaAs0.6P0.4:Te and GaP:N ,S. It is shown that the concentrations of deep electron traps T 1 (0. 20 eV) and T2 (0.18 eV) in GaAs0.6P0.4:Te are dependent on the shallow donor concentration and these traps are tentatively identified as Te( As)Ga(As)Te(As) and 0(i)Te(As) complexes respectively. The concentrati ons of 0.24 eV and 0.44 eV electron traps detected in GaP:N,S are depe ndent on the growth temperature and these traps are attributed to P va cancies and the ((N(P))2V(Ga))-complex respectively.