Je. Fouquet et al., EXTREMELY LOW-BACK FACET FEEDBACK BY QUANTUM-CONFINED STARK-EFFECT ABSORPTION IN AN EDGE-EMITTING LIGHT-EMITTING DIODE, IEEE photonics technology letters, 5(5), 1993, pp. 509-511
The quantum-confined Stark effect is employed to form an integral reve
rse-biased absorber in a GaInAsP edge-emitting light emitting diode. O
ptical low coherence reflectometry is used to measure the magnitude of
reflections through this absorber. Front facet-back facet roundtrip r
eflection magnitudes are below -110 dB in devices having an antireflec
tion coating on the front facet only. All other round trip reflections
are below -80 dB. This device provides a wide usable dynamic range in
optical low coherence reflectometry measurements.