HIGH PERMEABILITY OF FE-AL-SI ALLOYS FILMS DEPOSITED ON PLASMA-FREE SUBSTRATE BY DC BIAS SPUTTERING

Soft magnetic Fe75Al10Si15 (Sendust) films were deposited on substrate s separated from the high-energy plasma using the facing targets sputt ering (FTS) apparatus. The Ar bias voltage V(B) was changed in the ran ge of 0 to -150 V, and the substrate temperature T(s) was adjusted in the range of 50 approximately 400-degrees-C. Films deposited at P(Ar) of 1.0 mTorr and V(B) of -100 V possessed almost the same composition as that of the targets: Fe75Al10Si15. Films deposited at P(Ar) = 1.0 m Torr, V(B) = 0 V and T(s) = 350-degrees-C exhibited a saturation magne tization 4piM(s) = 11.7 kG, a coercivity H(c) = 0.6 Oe, and a static r elative permeability mu(rs) = 5000. On the other hand, films deposited at P(Ar) = 1.0 mTorr, V(B) = -100 V and T(s) = 50-degrees-C exhibited 4piM(S) = 12.0 kG, H(C) = 0.4 Oe and mu(rs) = 8000. In addition, thes e films exhibited radio frequency relative permeability mu(rf) of 2850 and 1050 at f(M) = 10 and 50 MHz, respectively.