IMPLANTATION TEMPERATURE-DEPENDENT DISTRIBUTION OF NISI2 FORMED BY ION-BEAM SYNTHESIS IN SILICON

Authors
VANHELLEMONT J BENDER H WU MF DEWACHTER J HENDRICKX P PATTYN H VANBAVEL AM LANGOUCHE G MAENHOUDT M BRUYNSERAEDE Y
Citation
J. Vanhellemont et al., IMPLANTATION TEMPERATURE-DEPENDENT DISTRIBUTION OF NISI2 FORMED BY ION-BEAM SYNTHESIS IN SILICON, Applied physics letters, 62(22), 1993, pp. 2795-2797
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
22
Year of publication
1993
Pages
2795 - 2797
Database
ISI
SICI code
0003-6951(1993)62:22<2795:ITDONF>2.0.ZU;2-4
Abstract
The formation and distribution of NiSi2 in (111) silicon by Ni-ion imp lantation with a fluence of 1.1 X 10(17) cm-2 and an energy of 90 keV is studied as a function of the temperature during implantation. For t emperatures below 200-degrees-C, a buried layer of NiSi2 precipitates is formed. Increasing the temperature gradually from 200 to 350-degree s-C leads first to the formation of a double buried NiSi2 layer which with increasing temperature evolves into an epitaxial NiSi2 surface la yer. A tentative model to explain for the observed anomalous behavior is presented.