PITFALLS IN THE MEASUREMENT OF METAL P-SI CONTACTS - THE EFFECT OF HYDROGEN PASSIVATION/

Citation
Jp. Sullivan et al., PITFALLS IN THE MEASUREMENT OF METAL P-SI CONTACTS - THE EFFECT OF HYDROGEN PASSIVATION/, Applied physics letters, 62(22), 1993, pp. 2804-2806
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
22
Year of publication
1993
Pages
2804 - 2806
Database
ISI
SICI code
0003-6951(1993)62:22<2804:PITMOM>2.0.ZU;2-P
Abstract
Chemical etching of Si, used in the preparation of clean, hydrogen-ter minated Si surfaces, was found to inject hydrogen-leading to the passi vation of acceptors at depths over 0.5 mum. This effect explains the ' 'high'' barrier heights, the nonlinear capacitance-voltage plots, and the nonuniform dopant profiles observed for metals deposited on unanne aled, etched p-type substrates. Room-temperature metal deposition on a tomically clean, well-annealed p-type substrates showed no changes in the active dopant profile, in disagreement with metal-acceptor complex mechanisms recently proposed.