KINETICS OF HYDROGEN DESORPTION IN SURFACE-LIMITED THIN-FILM GROWTH OF SIGE ALLOYS

The kinetics of hydrogen desorption in surface-limited thin-film growt h of SiGe alloys from binary mixtures of disilane and digermane was in vestigated by surface differential reflectance. The hydrogen desorptio n process from the alloy surface was found to consist of two component s. Both components are thermally activated, but the activation energie s appear to equal neither the hydrogen desorption energy from pure sil icon nor that from pure.germanium surfaces. We suggest that the two co mponents represent Ge- and Si-mediated hydrogen desorption, with the f ormer being more rapid than the latter.