ADMITTANCE SPECTROSCOPY CHARACTERIZATION OF INP INGAASP SINGLE QUANTUM-WELLS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

A set of sulfur-doped low pressure metalorganic vapor phase epitaxy In P/InGaAsP single quantum wells have been studied by admittance spectro scopy and a variety of other techniques. Admittance spectroscopy allow s the studies of carrier emission from both the sulfur shallow impurit y state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow im purity level is found to be 10 meV, in agreement with a simple theoret ical calculation.