PHOTODETECTORS FABRICATED FROM RAPID-THERMAL-OXIDIZED POROUS SI

Authors
TSAI CC LI KH CAMPBELL JC TASCH A
Citation
Cc. Tsai et al., PHOTODETECTORS FABRICATED FROM RAPID-THERMAL-OXIDIZED POROUS SI, Applied physics letters, 62(22), 1993, pp. 2818-2820
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
22
Year of publication
1993
Pages
2818 - 2820
Database
ISI
SICI code
0003-6951(1993)62:22<2818:PFFRPS>2.0.ZU;2-7
Abstract
A metal-semiconductor-metal (MSM) photoconductor and a p-n photodiode have been fabricated from rapid-thermal-oxidized (RTO) porous Si. The MSM photoconductor achieved 2.8 X higher responsivity at 350 nm than a UV-enhanced Si photodiode, and the RTO photodiode exhibited an extern al quantum efficiency of 75% at 740 nm.