HYDROSTATIC-PRESSURE DEPENDENCE OF THE CU-ACCEPTOR LEVEL IN IN0.53GA0.47AS

Low-temperature photoluminescence measurements have been used to study the evolution of the Cu-acceptor level in In0.53Ga0.47As as a functio n of hydrostatic pressure. In the pressure range up to 37 kbar the Cu related emission closely tracks the near-band-edge emission. A pressur e coefficient of the Cu-acceptor level relative to the valence-band ed ge of 0+/-0.5 meV/kbar was determined, and the corresponding pressure coefficient of the Cu-acceptor level relative to the conduction-band e dge was found to be 10.9+/-0.2 meV/kbar.