QUALITY OF ZNSE GAAS EPILAYERS STUDIED BY SPATIAL CORRELATION MODEL OF RAMAN-SCATTERING/

Authors
WANG J YAO WH WANG JB LU HQ SUN HH WANG X PANG ZL
Citation
J. Wang et al., QUALITY OF ZNSE GAAS EPILAYERS STUDIED BY SPATIAL CORRELATION MODEL OF RAMAN-SCATTERING/, Applied physics letters, 62(22), 1993, pp. 2845-2847
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
22
Year of publication
1993
Pages
2845 - 2847
Database
ISI
SICI code
0003-6951(1993)62:22<2845:QOZGES>2.0.ZU;2-Y
Abstract
In this letter, the spatial correlation model has been used for interp reting the line shapes of the first-order longitudinal-optical phonon Raman spectra of ZnSe/GaAs epitaxial layers. The good agreement betwee n theoretical line shapes and the experiment measurements was illustra ted for the samples grown by the molecular beam epitaxy (MBE), hot wal l epitaxy (HWE), and hot wall beam epitaxy (HWBE).