STICKING, ADSORPTION, AND ABSORPTION OF ATOMIC-H ON CU(110)

Citation
U. Bischler et al., STICKING, ADSORPTION, AND ABSORPTION OF ATOMIC-H ON CU(110), Physical review letters, 70(23), 1993, pp. 3603-3606
Citations number
31
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
70
Issue
23
Year of publication
1993
Pages
3603 - 3606
Database
ISI
SICI code
0031-9007(1993)70:23<3603:SAAAOA>2.0.ZU;2-Y
Abstract
The sticking coefficient of atomic hydrogen at T(G) = 1815 K on a Cu ( 110) surface has been determined to be 18%. In addition to the buildup of a chemisorption layer the absorption of atomic H into subsurface s ites is observed. The subsurface sites are thermally less stable than the chemisorption sites. Model calculations for the phononic energy tr ansfer and estimates for the parallel momentum transfer as well as for electron-hole pair excitation indicate that the first two mechanisms dominate the accommodation process.