UNIFORM DIAMOND COATINGS ON 4 IN SI WAFERS

Four-inch Si wafers were uniformly coated with diamond in a microwave electron cyclotron resonance (muWECR) process at 2 x 10(-2) mbar gas p ressure. The thermal filament chemical vapour deposition technique was employed to pre-coat the wafers only for the optimization of the muWE CR technique. Special work was necessary to determine the early growth of diamond. Good-quality coatings can be obtained, allowing patternin g and boron doping for the fabrication of microsensors, such as thermi stors, on Si wafers.