Metalorganic chemical vapor deposition of InGaP using phosphine and te
rtiarybutylphosphine in various mixture ratios was carried out in orde
r to elucidate the growth mechanism. It revealed that the two species
generated from the phosphorus source, i.e., PH(x)(x=0-2) radicals and
phosphorus molecules (P2 and/or P4), are necessary for epitaxial growt
h with high source material efficiency.