ZN INDUCED LAYER DISORDERING IN GAINP ALINP VISIBLE MULTIQUANTUM-WELLDISTRIBUTED BRAGG REFLECTOR LASER-DIODE/

Investigation of the impurity-induced layer disordering of GaInP (2 mo nolayers)/AlInP (2 monolayers) superlattice and multi-quantum-well (MQ W) active layer in GaInP/AlInP quantum-well distributed Bragg reflecto r laser diode and its effect on the band gap was performed using trans mission electron microscopy, photoluminescence and secondary ion mass spectrometry (SIMS). The GaInP/AlInP superlattice and MQW active layer s were completely disordered by Zn diffusion even at 650-degrees-C for 5 min. The band gap of active layer was increased by DELTAE=155 meV a fter Zn diffusion. Segregation of Zn was also observed by SIMS analysi s.