HALL-COEFFICIENT OF A PINNED 2D ELECTRON LATTICE

Authors
Citation
St. Chui, HALL-COEFFICIENT OF A PINNED 2D ELECTRON LATTICE, Solid state communications, 86(9), 1993, pp. 605-606
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
86
Issue
9
Year of publication
1993
Pages
605 - 606
Database
ISI
SICI code
0038-1098(1993)86:9<605:HOAP2E>2.0.ZU;2-J
Abstract
We argued that for transport due to dislocation pairs the ratio of the Hall resistivity to its classical value is given by rho(xy)/rho(xy)0 = 1/(1 + x), x = piepsilon0omega0(2)mL(y)/en(e) ln (L(y)/a) where epsi lon0 is the permeability of the vacuum, L(y) in units of meter is the transverse dimension of the sample, omega0 is the average pinning freq uency due to impurities, n(e) is the density of the electrons. Taking an experimental estimate of the pinning frequency of 1 GHz, x almost-e qual-to 10(-18). Thus the Hall coefficient is very close to the classi cal value. The longitudinal resistivity is activated in character but the Hall coefficient is not. This is observed experimentally. On the o ther hand, if transport were dominated by other ''isotropic'' defects such as vacancies, the Hall resistivity would also be of activated cha racter.