THERMALLY STABLE, BURIED HIGH-RESISTANCE LAYERS IN P-TYPE INP OBTAINED BY MEV ENERGY TI IMPLANTATION

High-energy Ti+ ions ranging from 1 to 5 MeV were implanted into p-typ e InP:Zn (for two different zinc concentrations) at both room temperat ure and 200-degrees-C. The range statistics for Ti implanted at variou s energies were calculated by analyzing the as-implanted profiles dete rmined by secondary-ion mass spectrometry. Ti did not redistribute dur ing post-implantation annealing except for a slight indiffusion, irres pective of the implant or annealing temperatures used. This behavior i s different from the behavior of other implanted transition metals (Fe and Co) in InP, which redistributed highly when the implants were per formed at room temperature. In the MeV Ti-implanted InP:Zn the backgro und Zn showed a small degree of redistribution. Rutherford backscatter ing measurements showed a near virgin lattice perfection for 200-degre es-C implants after annealing. Buried layers with intrinsic resistivit y were obtained by MeV Ti implantation in InP:Zn (p = 5 X 10(16) cm-3) .