RADIATION-INDUCED REVERSE DARK CURRENTS IN IN0.53GA0.47AS PHOTODIODES

The reverse dark current-voltage (dark I-V) curves of InGaAs photodiod es have been measured as a function of temperature following irradiati on with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generat ion current which can be modelled as resulting from a single defect ce nter with an energy E(c)-0.29 eV. Such a defect center called E2 has b een detected using deep level transient spectroscopy.