LOW DISLOCATION DENSITY GAAS ON SI HETEROEPITAXY WITH ATOMIC-HYDROGENIRRADIATION FOR OPTOELECTRONIC INTEGRATION

Basic experimental results obtained for the low-temperature molecular beam epitaxy with atomic hydrogen have been presented. GaAs films grow n at different substrate temperatures have exhibited different values of dislocation densities and the average dislocation density as low as 3 X 10(4) cm-2 has been successfully obtained for the films grown at a low-temperature of 330-degrees-C with atomic hydrogen irradiation. T hese are among the lowest dislocation values reported to date. The sur face cleaning effects and reconstruction of vicinal Si(100) surfaces d uring the atomic hydrogen irradiation, and also the electrical propert ies of epitaxial films have been investigated and analyzed: Physics be hind the drastic dislocation density reduction has been investigated i n detail based on the results of cross-sectional and plan-view transmi ssion electron microscope observations and analysis of the growth kine tics.